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Advanced Technical Information
HiPerFET TM
Power MOSFETs
IXFK 180N085
IXFX 180N085
V DSS
I D25
R DS(on)
= 85 V
= 180 A
= 7 m W
Single MOSFET Die
t rr ￡ 250 ns
Symbol
Test Conditions
Maximum Ratings
PLUS 247 TM (IXFX)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
85
85
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
G
D
D (TAB)
I D25
I D(RMS)
I DM
I AR
T C = 25 ° C (MOSFET chip capability)
External lead current limit
T C = 25 ° C, Note 1
T C = 25 ° C
180
76
720
180
A
A
A
A
TO-264 AA (IXFK)
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS
T J ￡ 150 ° C, R G = 2 W
60
3
5
mJ
J
V/ns
G = Gate
S = Source
G
D
S
D = Drain
TAB = Drain
(TAB)
P D
T C = 25 ° C
560
W
T J
-55 ... +150
° C
Features
T JM
T stg
150
-55 ... +150
° C
° C
?
?
International standard packages
Low R DS (on) HDMOS TM process
T L
1.6 mm (0.063 in.) from case for 10 s
300
° C
?
?
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
M d
Weight
Mounting torque
TO-264
PLUS 247
TO-264
0.9/6
6
10
Nm/lb.in.
g
g
rated
? Low package inductance
- easy to drive and to protect
? Fast intrinsic rectifier
Applications
?
?
DC-DC converters
Synchronous rectification
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
?
?
Battery chargers
Switched-mode and resonant-mode
power supplies
V DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 3mA
V DS = V GS , I D = 8mA
V GS = ± 20 V, V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 0.5 ? I D25
Note 1
T J = 25 ° C
T J = 125 ° C
85
2.0
V
4.0 V
± 100 nA
100 m A
2 mA
7 m W
? DC choppers
? Temperature and lighting controls
? Low voltage relays
Advantages
? PLUS 247 TM package for clip or spring
mounting
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98637 (7/99)
1-2
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相关代理商/技术参数
IXFK180N10 功能描述:MOSFET 100V 180A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK180N10_09 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiperFET Power MOSFETs
IXFK180N15P 功能描述:MOSFET 180 Amps 150V 0.011 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK180N25T 功能描述:MOSFET 180A 250V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK185N10 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 185A I(D) | TO-264AA
IXFK200N10P 功能描述:MOSFET 200 Amps 100V 0.0075 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK20N120 功能描述:MOSFET 20 Amps 1200 V 0.75 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK20N120P 功能描述:MOSFET 20 Amps 1200V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube